papers

Photovoltaic properties of SnS based solar cells

Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 cm with an optical energy band gap ( E g ) of 1.32 eV. Heterojunction sola...

Growth of polycrystalline SnS films by spray pyrolysis

Thin films of tin monosulfide (SnS) have been prepared by spray pyrolysis on Corning 7059 glass substrates with the substrate temperatures in the range 300350C, keeping the other deposition parameters constant. The films were characterised to evaluate the composition, structure , electrical resistivity and optical ener...

Microstructure dependent physical properties of evaporated tin sulfide films

In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energy band gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic prepara...

Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

This work explores the temperature dependent heterojunction behavior of n n -type zinc oxide (ZnO) nanorods/ Zn O ∕ p - Si Zn O ∕ p - Si diodes. The as-grown ZnO nanorod structures on ZnO coated p - Si p - Si substrates are single crystalline and grown along the [001] direction. The p - n p - n diode showed an exce...

SnS films for photovoltaic applications: Physical investigations on sprayed SnxSy films

Thin films of tin sulphide (Sn x S y ) have been deposited on antimony-doped tin oxide-coated glass substrates using spray pyrolysis. The depositions were made using 0.1 M equimolar solutions of tin chloride and thiourea at different substrate temperatures varied in the range 100450 C. The physical properties of the fi...