Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

This work explores the temperature dependent heterojunction behavior of n$n$-type zinc oxide (ZnO) nanorods/ZnO∕p-Si$\mathrm{Zn}\mathrm{O}∕p\text{-}\mathrm{Si}$ diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si$p\text{-}\mathrm{Si}$ substrates are single crystalline and grown along the [001] direction. The p-n$p\text{-}n$ diode showed an excellent stability over the temperature range of 20–150°C$20–150°\mathrm{C}$ due to highly doped p$p$-type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42to0.67μA$0.42\text{to}0.67\mu \mathrm{A}$. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.