Low Resistive Micrometer-Thick SnS : Ag Films for Optoelectronic Applications

Ag-doped

SnS

films have been grown with a thickness of

\sim 0.5 μ m

by thermal evaporation technique on Coring 7059 glass substrates at a substrate temperature of

275 ° C

. The effects of doping on the physical properties of the films have been investigated. The physical characteristics of the films are discussed and correlated to the microstructural and electro-optical properties. Electro-optical studies show that undoped

SnS

films have an electrical resistivity and optical bandgap of

35.6 Ω cm

and

1.35 eV

at room temperature. With the increase of Ag dopant concentration, the resistivity of the

SnS

layers initially decreased, reached a minimum value of

6.98 Ω cm

at 15 atom % of Ag and again increased thereafter. However, optical bandgap

(E_{g})

of the films decreased nonlinearly with increase of Ag percentage. An empirical formula

E_{g} = 1.345 - 0.0014 X + 5.952 \times 10^{- 5} X^{2}

, which describes the energy gap as a function of the film composition, has been derived. The doping effect on the surface structure of

SnS

films was also studied.

Low Resistive Micrometer-Thick SnS : Ag Films for Optoelectronic Applications

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